Ternary HfO2 and La2O3 Based High-k Gate Dielectric Films for Advanced CMOS Applications
作者： Akira Toriumi , Koji Kita
DOI: 10.1007/978-3-642-36535-5_10
关键词:
摘要: We first discuss HfO2-based ternary high-k dielectric films. emphasize that materials do not only exhibit average properties expected by the mean-media model, but they also reveal unexpected due to structural phase transformation. La2O3-based films, where dopant atoms play a key role in stabilizing hexagonal is inherently of La2O3. Finally, dielectrics for preparing amorphous gate insulators are discussed from viewpoint forming random network structure and suppressing long-range ordering. Understanding systems will hopefully guide us higher-k and/or those highly reliable.
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