La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy
作者： A. Dimoulas , G. Vellianitis , G. Mavrou , G. Apostolopoulos , A. Travlos
DOI: 10.1063/1.1806556
关键词: Capacitor 、 Epitaxy 、 Optoelectronics 、 Thin film 、 Gate dielectric 、 Hysteresis 、 Dielectric 、 Permittivity 、 Molecular beam epitaxy 、 Materials science
摘要: We show that at deposition temperature in the 750–770°C range, La2Hf2O7 (LHO) compound can be grown crystalline on Si(001). The predominant orientation is (001)LHO∕∕(001)Si and [110]LHO∕∕[110]Si results ultimately clean interfaces, indicating a strong tendency for cube-on-cube epitaxy. ordered pyrochlore random fluorite phases coexist dielectric. Acceptable gate leakage current, negligible hysteresis high dielectric permittivity κ∼23 were obtained from electrical characterization of metal–insulator–semiconductor capacitors. quality interfaces good characteristics make LHO promising high-κ candidate replacement SiO2 future aggressively scaled transistors.
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