Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si
作者： J. W. Seo , J. Fompeyrine , A. Guiller , G. Norga , C. Marchiori
DOI: 10.1063/1.1635966
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摘要: We have studied the growth of epitaxial La2Zr2O7 thin films on (111) Si. Although interface structure can be strongly affected by Si oxidation during deposition process, was obtained. A detailed study means transmission electron microscopy reveals two types structures (pyrochlore and fluorite) with same average chemical composition but strong differences in reactivity formation. The structural complexity ordered pyrochlore seems to prevent excess oxygen diffusion interfacial SiO2
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