Ferroelectricity of HfZrO 2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
作者： Min Hung Lee , Y.-T Wei , C. Liu , J.-J Huang , Ming Tang
DOI: 10.1109/JEDS.2015.2435492
关键词:
摘要: The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic gain measured polarization hysteresis loop calculated subthreshold swing 33 mV/dec over six decades $I_{\rm DS} $ . A feasible concept coupling AFE is experimentally established with validity negative capacitance beneficial FET development future generation.
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