Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off <0.2V, and hysteresis-free strategies
作者： M. H. Lee , P.-G. Chen , C. Liu , K-Y. Chu , C.-C. Cheng
DOI: 10.1109/IEDM.2015.7409759
关键词:
摘要: … -free and sub-0.2V switching by numerical simulation. … except ZrO2:HfO2, which is a nearly equal mixture of ZrO2 … Then, the 120-nm-thick TaN is covered on the prior insulator layer by a …
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