High temperature performance of Si:HfO 2 based long channel Double Gate Ferroelectric Junctionless Transistors
作者： Hema Mehta , Harsupreet Kaur
DOI: 10.1016/J.SPMI.2017.01.009
关键词: Transistor 、 Double gate 、 Leakage (electronics) 、 CMOS 、 Materials science 、 Potential candidate 、 Optoelectronics 、 Nanotechnology 、 Ion 、 Negative impedance converter 、 Ferroelectricity
摘要: Abstract In this work, we present a study that explores the suitability of Double Gate Ferroelectric Junctionless Transistor (DGFJL) incorporating Si:HfO2 for high temperature applications. At present, very few studies are focussed on to investigate its integrability in CMOS design space. Therefore, study, using analytical modeling and TCAD simulations, it is demonstrated based DGFJL exhibits superior performance terms substantial gain, reduced leakage currents, improved current drivability Ion/Ioff ratio at elevated temperatures as compared DGJL counterpart. The thus, highlights fact potential candidate device applications temperatures.
harvard.edu
sci-hub.se 参考文章(37)
S. Dasgupta, A. Rajashekhar, K. Majumdar, N. Agrawal, A. Razavieh, S. Trolier-Mckinstry, S. Datta, Sub- kT/q Switching in Strong Inversion in PbZr 0.52 Ti 0.48 O 3 Gated Negative Capacitance FETs IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. ,vol. 1, pp. 43- 48 ,(2015) , 10.1109/JXCDC.2015.2448414
T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, U. Böttger, Ferroelectricity in hafnium oxide thin films Applied Physics Letters. ,vol. 99, pp. 102903- ,(2011) , 10.1063/1.3634052
R. Lenggenhager, H. Baltes, J. Peer, M. Forster, Thermoelectric infrared sensors by CMOS technology IEEE Electron Device Letters. ,vol. 13, pp. 454- 456 ,(1992) , 10.1109/55.192792
Norio Fujitsuka, Jiro Sakata, Yukio Miyachi, Kentaro Mizuno, Kazuo Ohtsuka, Yasunori Taga, Osamu Tabata, Monolithic pyroelectric infrared image sensor using PVDF thin film Sensors and Actuators A-physical. ,vol. 66, pp. 237- 243 ,(1998) , 10.1016/S0924-4247(98)00050-8
Ekaterina Yurchuk, Johannes Muller, Jan Paul, Till Schlosser, Dominik Martin, Raik Hoffmann, Stefan Mueller, Stefan Slesazeck, Uwe Schroeder, Roman Boschke, Ralf van Bentum, Thomas Mikolajick, Impact of Scaling on the Performance of HfO 2 -Based Ferroelectric Field Effect Transistors IEEE Transactions on Electron Devices. ,vol. 61, pp. 3699- 3706 ,(2014) , 10.1109/TED.2014.2354833
J. Muller, E. Yurchuk, T. Schlosser, J. Paul, R. Hoffmann, S. Muller, D. Martin, S. Slesazeck, P. Polakowski, J. Sundqvist, M. Czernohorsky, K. Seidel, P. Kucher, R. Boschke, M. Trentzsch, K. Gebauer, U. Schroder, T. Mikolajick, Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG symposium on vlsi technology. pp. 25- 26 ,(2012) , 10.1109/VLSIT.2012.6242443
S. Clima, D. J. Wouters, C. Adelmann, T. Schenk, U. Schroeder, M. Jurczak, G. Pourtois, Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight Applied Physics Letters. ,vol. 104, pp. 092906- ,(2014) , 10.1063/1.4867975
J. Muller, T. S. Boscke, S. Muller, E. Yurchuk, P. Polakowski, J. Paul, D. Martin, T. Schenk, K. Khullar, A. Kersch, W. Weinreich, S. Riedel, K. Seidel, A. Kumar, T. M. Arruda, S. V. Kalinin, T. Schlosser, R. Boschke, R. van Bentum, U. Schroder, T. Mikolajick, Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories international electron devices meeting. ,(2013) , 10.1109/IEDM.2013.6724605
YG Xiao, MH Tang, JC Li, CP Cheng, B Jiang, HQ Cai, ZH Tang, XS Lv, XC Gu, None, Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors Applied Physics Letters. ,vol. 100, pp. 083508- ,(2012) , 10.1063/1.3688046
A Roy, A Dhar, D Bhattacharya, S K Ray, Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer Journal of Physics D. ,vol. 41, pp. 095408- ,(2008) , 10.1088/0022-3727/41/9/095408