Photoemission study of hydrogen adsorption on vanadium dioxide near the semiconductor-metal phase transition.
作者： V. M. Bermudez , R. T. Williams , J. P. Long , R. K. Reed , P. H. Klein
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摘要: The valence-band ultraviolet photoemission spectrum of VO{sub 2} has been studied above and below the semiconductor-metal phase-transition temperature ({approx}340 K) as a function exposure to hydrogen. Evidence is found for partial reduction surface, leading formation adsorbed OH an increase in V 3{ital d}-electron density. hydrogen appears impede phase transition within sampling depth. A model this effect suggested, based on increased V-O {pi}-bonding interaction.
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