Photocarrier-injected electronic structure of VO2∕TiO2:Nb
作者： R. Eguchi , S. Shin , A. Fukushima , T. Kiss , T. Shimojima
DOI: 10.1063/1.2132078
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摘要: We study the effect of photocarrier injection on electronic structure VO2∕TiO2:Nb thin films using photoemission spectroscopy. The results indicate that valence band and core states VO2 shift systematically to lower binding energy upon injection, consistent with doping in a rigid-band picture. energy, its saturation, follows known photovoltage behavior. In addition, V 3d near EF exhibit redistribution/transfer spectral weight, similar temperature dependent insulator metal transition VO2. provides evidence for hole-doping induced changes due photocarriers
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