Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near-infrared regime
作者： G Yusa , H Sakaki
DOI: 10.1016/S1386-9477(98)00150-7
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摘要: Abstract The trapping of electrons and holes in self-assembled InAs quantum dots (QDs) has been studied at low temperatures GaAs/n-AlGaAs heterostructures. It found that the concentration Ns two-dimensional a given gate voltage Vg is persistently enhanced by laser illumination, because QDs. We also how number trapped depends on energy excitation photons from Ti-sapphire laser. Applications this device for memory near-infrared detector are discussed.
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