Photoluminescence of InGaAs(P) dots with quasi-zero-dimensional confinement
作者： Kazunari Ozasa , Sintaro Nomura , Misaichi Takeuchi , Yoshinobu Aoyagi
DOI: 10.1016/S0921-5107(01)00634-1
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摘要: Abstract Photoluminescence (PL) of InGaAs(P) dots with quasi zero-dimensional (0D) confinement has been measured and discussed from the viewpoint dot composition/shape, energetic/spatial confinement, coexistence 0D/2D in same layer. Quasi-0D structures were prepared by self-assembly InGaAs on GaAs their situ phosphidation, which changes composition shape at time. From temperature dependence photoluminescence versus phosphidation time, it was found that PL peak energy quenching for various quasi-0D confinements are dominated rather than shape, whereas diamagnetic shift is affected as well. The series near-field spectra presented OD/2D transition, where coupling proceeds. Fine peaks 0D spectrum toward higher energies coalesce into one quantum well (QW) according to but width each fine remains unchanged. Coexistence 2D layer proved superimposed a QW peak. Since photon close among coexisting peaks, dot-to-dot electron interaction must be weak even these systems.
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