作者: Kazunari Ozasa , Sintaro Nomura , Yoshinobu Aoyagi
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摘要: Nanoprobe near-field photoluminescence (PL) of InGaAs(P) dots with quasi-zero-dimensional (quasi-0D) confinement various degrees 0D/2D has been investigated by studying probe-induced pressure effects and probe-bias effects. Fine PL peaks 0D are superimposed on quantum well (QW) for quasi-0D structures, which proves the coexistence two-dimensional (2D) in same layer. Large blue shifts approximately 100 meV were observed to occur increase fine peaks, but no shift was QW peak. The eliminated larger pressures, should be attributed carrier diffusion rather than Γ–X crossover energy levels. peak increased positive probe bias, while showed a smaller red up 8–9 meV. results obtained can explained excitation immobile excitons potentials mobile carriers 2D