Enhanced photoluminescence of InGaAs quantum dots induced by nanoprobe indentation
作者： Kazunari Ozasa , Yoshinobu Aoyagi , Masahiko Hara , Mizuo Maeda , Akihiko Yamane
DOI: 10.1016/J.PHYSE.2003.11.068
关键词: Photoluminescence 、 Optoelectronics 、 Nanotechnology 、 Quantum dot 、 Indentation 、 Strain distribution 、 Materials science 、 Nanoprobe 、 Hamiltonian (quantum mechanics)
摘要: Abstract We have found in the nanoprobe-photoluminescnece (PL) measurement that PL from InGaAs quantum dots was enhanced remarkably by small elastic indentation of nanoprobe onto sample surface. In order to clarify mechanism enhancement, nanoprobe-induced strain distribution and energy-band profiles bulk GaAs been calculated on bases linear continuum theory six-band Hamiltonian. It nm-scale modulation results confinement potential for light holes 50– 70 nm beneath nanoprobe, revealing hole accumulation into minimum causes enhancement.
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