In situ control of strain-induced dot structure by arsenic/phosphorus replacement

作者: Kazunari Ozasa , Yoshinobu Aoyagi

DOI: 10.1007/S11664-999-0092-0

关键词: Lattice constantPartial pressureScanning electron microscopeAnalytical chemistryIn situMonolayerArsenicFabricationPhotoluminescenceChemistry

摘要: By means of in situ arsenic/phosphorus partial pressure control, the metastabilization transitional surface structures during coherent reformation and flattening InGaAs(P) dots has been achieved. Since coherently grown are maintained by strain accumulated between a sublayer, replacement several topmost monolayers changes lattice parameter dots, drastic change structure (the or their reformation) is induced. The surfaces being metastabilized were observed ex high-resolution scanning electron microscope an atomic force microscope, process dot reformation/flattening was made clear. To show application phosphidation arsenic phosphorus) step demonstrated using AsH3 pulse supply onto flattened surface. fabrication graded-composition attempted TEGa TMIn resulting large difference intensity photoluminescence (PL) Ga-added In-added dots. Furthermore, temperature dependence PL from flat investigated capping with GaAs overgrowth. effects on discussed through comparison unphosphidated

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