Light emission from vertical-microcavity quantum dot laser structures
作者： M. Nishioka , R. Schur , M. Kitamura , H. Watabe , Y. Arakawa
DOI: 10.1016/0921-4526(96)00454-1
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摘要: Abstract A vertical microcavity laser structure with an active layer of Stranski-Krastanow quantum dots was fabricated for the first time. The consists InGaAs dot grown by MOCVD, located between two AlAs/Al0.2Ga0.8As distributed Bragg-reflector mirrors. length 4λ(λ = 884 nm). cavity effect evidenced difference PL linewidths samples and without cavity.
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