A SiC hybrid operational amplifier for 350 degrees C operation
作者： M. Tomana , R.W. Johnson , R.C. Jaeger , J. Palmour
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摘要: A basic operational amplifier has been fabricated and tested using n-channel SiC MESFETs. An open-loop gain exceeding 63 dB achieved over the temperature range of 25-365 degrees C with a unity gain-bandwidth between 175 250 kHz. >
sci-hub.se 参考文章(4)
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