A hybrid 6H-SiC temperature sensor operational from 25/spl deg/C to 500/spl deg/C

作者: J.B. Casady , W.C. Dillard , R.W. Johnson , U. Rao

DOI: 10.1109/95.536843

关键词: OptoelectronicsSpiceMaterials scienceWide-bandgap semiconductorTemperature measurementVoltageJFETIntegrated circuitTransconductanceTransistor

摘要: … Simulation program with integrated circuit emphasis (SPICE) simulations of the temperature sensor, utilizing SPICE models developed from the 6H-Sic JFET's characterized, were …

参考文章(15)
J.B. Casady, R.W. Johnson, W.C. Dillard, Characterization of 6H-SiC JFETs for use in a temperature monitor operating from 25/spl deg/C to 350/spl deg/C electronic components and technology conference. pp. 255- 260 ,(1995) , 10.1109/ECTC.1995.514394
M. Tomana, R.W. Johnson, R.C. Jaeger, J. Palmour, A SiC hybrid operational amplifier for 350 degrees C operation electronic components and technology conference. pp. 157- 161 ,(1992) , 10.1109/ECTC.1992.204200
J.B. Casady, E.D. Luckowski, R.W. Johnson, J. Crofton, J.R. Williams, Fabrication procedures and characterization of 6H-SiC MESFETs for use in high temperature electronics electronic components and technology conference. pp. 261- 265 ,(1995) , 10.1109/ECTC.1995.514395
H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, M. Burns, Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies Journal of Applied Physics. ,vol. 76, pp. 1363- 1398 ,(1994) , 10.1063/1.358463
Ch. Haberstroh, R. Helbig, R. A. Stein, Some new features of the photoluminescence of SiC(6H), SiC(4H), and SiC(15R) Journal of Applied Physics. ,vol. 76, pp. 509- 513 ,(1994) , 10.1063/1.357103
J. Crofton, P. G. McMullin, J. R. Williams, M. J. Bozack, High‐temperature ohmic contact to n‐type 6H‐SiC using nickel Journal of Applied Physics. ,vol. 77, pp. 1317- 1319 ,(1995) , 10.1063/1.358936
John K. Krause, Brad C. Dodrill, Measurement system induced errors in diode thermometry Review of Scientific Instruments. ,vol. 57, pp. 661- 665 ,(1986) , 10.1063/1.1138886
W. v. Muench, I. Pfaffeneder, Breakdown field in vapor‐grown silicon carbidep‐njunctions Journal of Applied Physics. ,vol. 48, pp. 4831- 4833 ,(1977) , 10.1063/1.323509
Glen A. Slack, Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond Journal of Applied Physics. ,vol. 35, pp. 3460- 3466 ,(1964) , 10.1063/1.1713251
P Flatresse, T Ouisse, Noise analysis of silicon carbide JFETs Solid-state Electronics. ,vol. 38, pp. 971- 975 ,(1995) , 10.1016/0038-1101(95)98662-M