Compound semiconductor devices and methods of making compound semiconductor devices
作者： Masaaki Onomura , Peter J. Parbrook , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa
DOI:
关键词:
摘要: A compound semiconductor device with an improved internal current blocking structure. The includes n-clad layer of II-VI semiconductor, a p-clad active between the and layers, very thin n-type on providing opening, p-contact p-type at p-side electrode layer.
lens.org 参考文章(5)
Masashi Usami, Yuichi Matsushima, Semiconductor device with strained-layer superlattice ,(1993)
M. Ozawa, A. Ishibashi, M. Ikeda, Y. Mori, N. Nakayama, S. Itoh, T. Ohata, K. Nakano, H. Okuyama, Room temperature continuous operation of blue-green laser diodes Electronics Letters. ,vol. 29, pp. 1488- 1489 ,(1993) , 10.1049/EL:19930994
Isamu Akasaki, Michinari Sassa, Akira Mabuchi, Norikatsu Koide, Hisaki Kato, Masafumi Hashimoto, Katsuhide Manabe, Shiro Yamazaki, Light emitting semiconductor device using gallium nitride group compound ,(1991)
Atsuo Tsunoda, Masafumi Kondo, Takahiro Suyama, Masahiro Hosoda, Kosei Takahashi, Semiconductor device with substrate misorientation ,(1990)
Kohsuke Nishimura, Kazuo Sakai, Light emitting heterojunction semiconductor device ,(1990)