Precise thickness measurement within a few monolayers by X-ray diffraction from InGaAs/GaAs strained-layer superlattices

摘要: Abstract We propose a technique to measure the thickness of GaAs layer with precision few monolayers (MLs) by high-resolution X-ray diffraction (HRXRD) from InGaAs/GaAs strained-layer superlattices (SLSs) on substrates. Using this monitor growth rate, we have successfully controlled Ga beam flux within ± 1% in molecular epitaxy (MBE) for continuous 40 runs during four days increasing cell temperature compensate decrease caused consumption source. Precise measurements are also demonstrated InP substrates using InAlGaAs/InGaAs SLSs and InAlGaAs/InAlAs SLSs.