Electrical resistivity of UNi2Si2 in magnetic fields
作者： A. Syshchenko , V. Sechovský , A. V. Andreev , R. V. Dremov , J. Šebek
DOI: 10.1063/1.370405
关键词:
摘要: We report on electrical resistivity measurements for an UNi2Si2 single crystal in the temperature range 4.2–140 K and magnetic fields up to 8.4 T parallel c axis. The anomalies field dependencies of are associated with phase transitions allow one complete B–T diagram. relationship between periodicity particular phases is discussed light magnetoresistance behavior other antiferromagnetic U compounds.
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