作者: H. Wulff , C. Eggs
DOI: 10.1116/1.580888
关键词:
摘要: Thin TiNx films were deposited using a hollow cathode arc evaporation device (HCAED) for studying the influence of low energy ion bombardment on film growth and properties. Films at various nitrogen gas flows negative substrate voltages investigated by x-ray photoelectron spectroscopy (XPS) thin diffraction. The plasma was analyzed Langmuir probe measurements resolved mass spectrometry. From both results flow experiments voltage it can be concluded that concentration as well determine data obtained from monitoring used to calculate flux growing in relation deposition parameters. XPS provides information about chemical composition. shifting broadening line profiles concentrations interstitials, dislocation densities, domain sizes we...