作者: M. Simard‐Normandin , C. Slaby
DOI: 10.1149/1.2114323
关键词:
摘要: The depth distribution of low energy boron implants in silicon are analyzed using secondary ion mass spectroscopy. profiles for equivalent B/sup +/ (10-30 keV) and BF/sub 2//sup (50-120 compared. Fluorine trapping is also investigated. New range parameters extracted from the measured a least squares fitting technique. Pearson IV provides an excellent representation doping profile implants, while better represented gaussian with attached exponential tail.