The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations.
作者： Wenzhe Niu , Hongbin Xu , Yanmin Guo , Yaguang Li , Zhizhen Ye
DOI: 10.1039/C5CP02434J
关键词:
摘要: P-type sulphur-nitrogen (S-N) co-doped ZnO thin films are deposited and the effect of sulphur on electrical properties is discussed. First-principles calculations indicate that structure most stable when S atom close to N in (0002) plane, implying dual-doped relatively feasible approach. The partial density states S-N shows impurity plays a vital role forming p-type conductivity.
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