Wavelength tunable photoluminescence of ZnO1-xSx alloy thin films grown by reactive sputtering
作者： Hongbin Xu , Liping Zhu , Jie Jiang , Hui Cai , Wenfeng Chen
DOI: 10.1063/1.4820383
关键词: Photoluminescence 、 Band gap 、 Optoelectronics 、 Thin film 、 Wide-bandgap semiconductor 、 Lattice constant 、 Crystallography 、 Sputtering 、 Materials science 、 Semiconductor 、 Sputter deposition
摘要: ZnO1−xSx alloy thin films with various S contents were deposited on glass substrates by reactive sputtering. The grown in high crystalline quality and strong preferential crystallographic orientation. Variations of the lattice constant c followed Vegard's law. X-ray photoelectron spectroscopy confirmed substitution O ZnO. composition dependence band gap energy system was investigated bowing parameter estimated to be about 1.46 eV. incorporation led expected redshift related photoluminescence emission up 320 meV. results indicate that could hold prospect for development ZnO based quantum structures.
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