Self-Aligned-Gate Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistors with Long Memory Retention

摘要: Self-aligned-gate Pt/SrBi2Ta2O9/HfAlO/Si metal/ferroelectric/insulator/semiconductor (MFIS) field-effect transistors (FETs) were fabricated. Drain current (Id) versus gate voltage curves of the MFIS FETs showed almost same steepness as that a non-self-aligned-gate Pt/HfAlO/Si metal/insulator/semiconductor FET. Long retention times with large on- and off-state Id ratios obtained for FETs. The more than 33 days an ratio over 105 demonstrated self-aligned-gate FET 2-µm-long 80-µm-wide gate. This device longest memory among all ferroelectric-gate reported ever before.