作者: Todd Andrew Randazzo , Paul S. Fechner , Bradley J. Larsen
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摘要: Neutron detection cells and corresponding methods of detecting charged particles that make efficient use silicon area are set forth. Three types circuit cells/arrays described: state latching circuits, glitch generating cells, charge loss circuits. An array these used in conjunction with a neutron conversion film, increases the is sensitive to strike by particle over an SRAM cells. The result cell uses less power, costs less, more suitable for mass production.