Sandwiched diffusion barrier and metal liner for an interconnect structure
作者： Andrew Simon , Chengyu Niu , Tibor Bolom
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摘要: A trench is opened in a dielectric layer. The then lined with sandwiched diffusion barrier and metal liner structure seed includes conformal layer between first second at least lightly doped. filled by electroplating fill material. cap deposited over the trench. Dopant from doped migrated to an interface form self-aligned cap.
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