作者: Myung-Hee Kim , Joon-Suk Oh , Yong-Chan Kim , Dae-Shik Kim , Hye-young Park
DOI:
关键词:
摘要: A schottky diode may include a junction including well formed in semiconductor substrate and first electrode contacting the well. The have conductivity type. ohmic region second region. higher concentration of type than device isolation be separating junction. guard having opposite to At least portion under