Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication
作者： Steven Howard Voldman
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摘要: A semiconductor structure. The structure includes a substrate, first transistor on the and guard ring substrate. substrate top surface which defines reference direction perpendicular to surface. material doped with doping polarity. profile of region in second guard-ring are essentially same profile. forms closed loop around transistor.
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