Half pitch 14 nm direct pattering with Nanoimprint lithography

作者: T. Nakasugi , T. Kono , K. Fukuhara , M. Hatano , H. Tokue

DOI: 10.1109/IEDM.2018.8614578

关键词:

摘要: We developed a nanoimprint lithography (NIL) technology including NIL system, template and resist process for half pitch (hp) 14 nm direct pattering. The latest system NZ2C shows the mix match overlay (MMO) of 3.4 ( $3\sigma$ ) life around 125 lots. Throughput 80 wafers per hour (wph) was demonstrated using throughput enhancement solutions, such as gas permeable spin-on-carbon (GP-SOC) multi field dispense (MFD). hp fabricated by self-aligned double patterning (SADP) on template. Using this template, we dense Si lines with depth 50 300 mm wafer.

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