The development and application of an ion implanter based on ion thruster technology
作者： Paul J Wilbur , Larry O Daniels
DOI: 10.1016/0042-207X(86)90259-9
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摘要: Abstract The design of a very simple 10 cm dia implantation ion source that can be operated over the energy and current ranges 10–80 keV 1–50 mA respectively is described. It shown constrained sheath optics system facilitates operation wide range beam currents accelerating voltages with no substantial changes in its beamlet divergence characteristics. Over range, densities ranging from μA cm−2 to 1500 are measured at target location 50 downstream source. Auger electron spectrographic depth profiling data suggest high may used achieve increased penetration nitrogen ions below surface presumably as result thermal diffusion.
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