Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices
作者： D. V. Shuleiko , S. V. Zabotnov , D. M. Zhigunov , A. A. Zelenina , I. A. Kamenskih
DOI: 10.1134/S1063782617020208
关键词:
摘要: The photoluminescence properties of silicon nitride and oxide superlattices fabricated by plasmaenhanced chemical vapor deposition are studied. In the structures annealed at a temperature 1150°C, peaks about 1.45 eV recorded. defined exciton recombination in nanocrystals formed upon annealing. Along with 1.45-eV peaks, number defects interface between silicon-nitride matrix detected. 900°C exhibit range 1.3–2.0 eV. These both amorphous nanoclusters an annealing 900°C. observed features all spectra confirmed nature kinetics.
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