Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices
作者： A.M. Hartel , D. Hiller , S. Gutsch , P. Löper , S. Estradé
DOI: 10.1016/J.TSF.2011.06.084
关键词: X-ray photoelectron spectroscopy 、 Spectroscopy 、 Hydrogen 、 Analytical chemistry 、 Materials science 、 Plasma-enhanced chemical vapor deposition 、 Annealing (metallurgy) 、 Silicon oxynitride 、 Silicon 、 Fourier transform infrared spectroscopy
摘要: Abstract Size controlled silicon nanocrystals (SiNC) in oxynitride matrix were prepared using plasma enhanced chemical vapor deposition. The as-deposited superlattices (SLs) and the corresponding bulk films treated by thermal annealing. Hydrogen effusion was performed during heating up choosing a sufficiently low ramp. phase separation of layers into SiNCs surrounding studied at temperatures to 1150 °C. influence annealing temperature on SiOxNy/SiO2 – SLs with varying SiOxNy layer thickness investigated several analytical techniques including variable angle spectroscopic ellipsometry, photoluminescence (PL) spectroscopy, x-ray photoelectron Fourier transform infrared spectrometry (FTIR) transmission electron microscopy (TEM). Before FTIR investigations show addition expected Si-O bonds also formation nitrogen hydrogen related bonds. shift Si-O-Si stretching vibration higher wave numbers after indicates separation. disappearance effusion. PL signal is rising significantly increasing peak position strongly sublayers due quantum confinement effects. TEM confirm size-controlled growth within matrix. role incorporated discussed.
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A. Stesmans, M. Jivanescu, S. Godefroo, M. Zacharias, Paramagnetic point defects at SiO2/nanocrystalline Si interfaces Applied Physics Letters. ,vol. 93, pp. 023123- ,(2008) , 10.1063/1.2952276
D. V. Tsu, G. Lucovsky, B. N. Davidson, Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphous SiO r :H (0<r<2) alloy system Physical Review B. ,vol. 40, pp. 1795- 1805 ,(1989) , 10.1103/PHYSREVB.40.1795
M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, J. Bläsing, Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach Applied Physics Letters. ,vol. 80, pp. 661- 663 ,(2002) , 10.1063/1.1433906
J. Heitmann, R. Scholz, M. Schmidt, M. Zacharias, Size controlled nc-Si synthesis by SiO/SiO2 superlattices Journal of Non-crystalline Solids. ,vol. 299302, pp. 1075- 1078 ,(2002) , 10.1016/S0022-3093(01)01074-2
V. Mulloni, P. Bellutti, L. Vanzetti, XPS and SIMS investigation on the role of nitrogen in Si nanocrystals formation Surface Science. ,vol. 585, pp. 137- 143 ,(2005) , 10.1016/J.SUSC.2005.03.059
Chu-Wei Jiang, Martin A. Green, Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications Journal of Applied Physics. ,vol. 99, pp. 114902- ,(2006) , 10.1063/1.2203394
G. Lucovsky, W. B. Pollard, Local bonding of oxygen and hydrogen in a-Si:H:O thin films Journal of Vacuum Science and Technology. ,vol. 1, pp. 313- 316 ,(1983) , 10.1116/1.572121
L. A. Nesbit, Annealing characteristics of Si‐rich SiO2films Applied Physics Letters. ,vol. 46, pp. 38- 40 ,(1985) , 10.1063/1.95842
Fabio Iacona, Giorgia Franzò, Corrado Spinella, Correlation between luminescence and structural properties of Si nanocrystals Journal of Applied Physics. ,vol. 87, pp. 1295- 1303 ,(2000) , 10.1063/1.372013
L. X. Yi, J. Heitmann, R. Scholz, M. Zacharias, Si rings, Si clusters, and Si nanocrystals—different states of ultrathin SiOx layers Applied Physics Letters. ,vol. 81, pp. 4248- 4250 ,(2002) , 10.1063/1.1525051