引用次数
引用: 2,797
H-指数: 32
I10-指数 : 69
出版物: 122
Determination of Shape and Sphericity of Silicon Quantum Dots Imaged by EFTEM‐Tomography
Irving Cruz‐Matías , Sònia Estradé , Daniel Hiller , Dolors Ayala
Physica Status Solidi (c) 14 ( 12) 1610 -1642
3
2017
On the Location of Boron in SiO2‐embedded Si Nanocrystals – An X‐ray Absorption Spectroscopy and Density Functional Theory Study
Stefan Schuppler , Daniel Hiller , Daniel Hiller , Peter Nagel
Physica Status Solidi B-basic Solid State Physics 2000623
2021
The negative fixed charge of atomic layer deposited aluminium oxide—a two-dimensional SiO2/AlO x interface effect
Daniel Hiller , Thomas Mikolajick , Dirk König , Matthias Grube
Journal of Physics D 54 ( 27) 275304
2021
Boron-Incorporating Silicon Nanocrystals Embedded in SiO 2 : Absence of Free Carriers vs. B-Induced Defects
Daniel Hiller , Julian López-Vidrier , Sebastian Gutsch , Margit Zacharias
Scientific Reports 7 ( 1) 8337
19
2017
Silicon nanocrystals from high-temperature annealing : characterization on device level
Philipp Löper , Mariaconcetta Canino , Julian López-Vidrier , Manuel Schnabel
Physica Status Solidi (a) 210 ( 4) 669 -675
14
2013
Defect engineering of Si nanocrystal interfaces
Margit Zacharias , Daniel Hiller , Andreas Hartel , Sebastian Gutsch
Physica Status Solidi (a) 209 ( 12) 2449 -2454
10
2012
Rapid thermal annealing of size-controlled Si nanocrystals: Dependence of interface defect density on thermal budget
Daniel Hiller , Silvana Goetze , Margit Zacharias
Journal of Applied Physics 109 ( 5) 054308
22
2011
Atomic level termination for passivation and functionalisation of silicon surfaces.
Nicholas E. Grant , Alex I. Pointon , Richard Jefferies , Daniel Hiller
Nanoscale 12 ( 33) 17332 -17341
1
2020
A low thermal impact annealing process for SiO2-embedded Si nanocrystals with optimized interface quality
Daniel Hiller , Sebastian Gutsch , Andreas M. Hartel , Philipp Löper
Journal of Applied Physics 115 ( 13) 134311
17
2014
Material combination of Tunnel-SiO2 with a (sub-)Monolayer of ALD-AlOx on silicon offering a highly passivating hole selective contact
Daniel Hiller , Philipp Hönicke , Dirk König
Solar Energy Materials and Solar Cells 215 110654
14
2020
Using HCl to Control Silver Dissolution in Metal‐Assisted Chemical Etching of Silicon
Max O. Williams , Ada L. H. Jervell , Daniel Hiller , Margit Zacharias
Physica Status Solidi (a) 215 ( 18) 1800135
3
2018
Optimization of ALD‐ZnO Thin Films Toward Higher Conductivity
Holger Beh , Daniel Hiller , Margit Zacharias
Physica Status Solidi (a) 215 ( 16) 1700880
8
2018
Changes of the absorption cross section of Si nanocrystals with temperature and distance.
Michael Greben , Petro Khoroshyy , Sebastian Gutsch , Daniel Hiller
Beilstein Journal of Nanotechnology 8 ( 1) 2315 -2323
6
2017
Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride.
Daniel Hiller , Julian López-Vidrier , Keita Nomoto , Michael Wahl
Beilstein Journal of Nanotechnology 9 ( 1) 1501 -1511
6
2018
Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating.
Dirk König , Daniel Hiller , Noël Wilck , Birger Berghoff
Beilstein Journal of Nanotechnology 9 ( 1) 2255 -2264
12
2018
Quasi-Direct Optical Transitions in Silicon Nanocrystals with Intensity Exceeding the Bulk
Benjamin G. Lee , Jun-Wei Luo , Nathan R. Neale , Matthew C. Beard
Nano Letters 16 ( 3) 1583 -1589
32
2016
Location and Electronic Nature of Phosphorus in the Si Nanocrystal - SiO 2 System
Dirk König , Sebastian Gutsch , Hubert Gnaser , Michael Wahl
Scientific Reports 5 ( 1) 9702 -9702
55
2015
Silicon Surface Passivation by ALD-Ga 2 O 3 : Thermal vs. Plasma-Enhanced Atomic Layer Deposition
Daniel Hiller , Jaakko Julin , Ahmed Chnani , Steffen Strehle
IEEE Journal of Photovoltaics 10 ( 4) 959 -968
2020
Deactivation of silicon surface states by Al-induced acceptor states from Al–O monolayers in SiO2
Daniel Hiller , Paul M. Jordan , Kaining Ding , Manuel Pomaska
Journal of Applied Physics 125 ( 1) 015301
8
2019
Electronic Structure Shift of Deeply Nanoscale Silicon by Si O 2 versus Si 3 N 4 Embedding as an Alternative to Impurity Doping
Dirk König , Noël Wilck , Daniel Hiller , Birger Berghoff
Physical review applied 12 ( 5) 054050
5
2019