A low thermal impact annealing process for SiO2-embedded Si nanocrystals with optimized interface quality

摘要: Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications can be produced by several industrially compatible physical chemical vapor deposition technologies. A major obstacle the integration into a fabrication process is typical annealing to form and crystallize these Si quantum dots (QDs) which involves temperatures ≥1100  °C 1 h. This standard procedure allows interface qualities that correspond more than 95% dangling bond defect free NCs. We study possibilities use rapid thermal (RTA) flash lamp QDs within seconds milliseconds at high temperatures. The NC of such samples exhibits huge densities makes them inapplicable optoelectronics. However, if RTA temperature combined with medium inert gas post-annealing H2 passivation, luminescent fractions up 90% achiev...