作者: D. V. Tsu , G. Lucovsky , B. N. Davidson
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摘要: Hydrogenated silicon suboxides, ${\mathrm{SiO}}_{\mathrm{r}}$:H, for alloy range (0lrl2) have been deposited by remote plasma-enhanced chemical vapor deposition (remote PECVD) under conditions in which hydrogen is incorporated predominantly monohydride or SiH bonding configurations. We investigated both the bond-stretching and bond-bending absorption bands infrared (ir) spectroscopy as a function of r, composition. In this paper, we focused on bands, modeled shape band There are four distinct local environments group sub- oxides; these can be written HSi-${\mathrm{Si}}_{3\mathrm{\ensuremath{-}}\mathrm{n}}$${\mathrm{O}}_{\mathrm{n}}$, n=0--3. A sum Gaussian functions, one each environment, used to synthesize stretching band. The peak positions Gaussians calculated an induction model includes matrix (or alloy) effects; amplitude weightings determined from random statistical Si-O groups ${\mathrm{SiO}}_{\mathrm{r}}$ alloy. find that frequency shifts caused changes matrix, associated with different values comparable environments. combination effects serves diminish discreteness subband features spectrum.