Properties of the SiH bond-stretching absorption band in a-Si:H grown by remote plasma enhanced CVD (RPECVD)
作者： D.V. Tsu , G. Lucovsky
DOI: 10.1016/0022-3093(87)90201-8
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摘要: We have used RPECVD to deposit thin films of a-Si:H at substrate temperatures, Ts, between 38 and 400°C. find that: (a) hydrogen is in predominantly monohydride groups for Ts > 100°C; (b) that < 100°C, the dihydride concentration increases significantly; (c) frequency IR active SiH stretching band its width (FWHM) increase with increasing concentration, [H].
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G. Lucovsky, R. J. Nemanich, J. C. Knights, Structural interpretation of the vibrational spectra ofa-Si: H alloys Physical Review B. ,vol. 19, pp. 2064- 2073 ,(1979) , 10.1103/PHYSREVB.19.2064
G. Lucovsky, P. D. Richard, D. V. Tsu, S. Y. Lin, R. J. Markunas, Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 4, pp. 681- 688 ,(1986) , 10.1116/1.573832
H. Fritzsche, Characterized of glow-discharge deposited a-Si:H Solar Energy Materials. ,vol. 3, pp. 447- 501 ,(1980) , 10.1016/0165-1633(80)90001-5
G. Lucovsky, Chemical effects on the frequencies of Si-H vibrations in amorphous solids Solid State Communications. ,vol. 29, pp. 571- 576 ,(1979) , 10.1016/0038-1098(79)90666-5