Surface Studies of PVT Grown CdS Crystals
作者： Ebtesam A. Kadash , Arwa A. Al Hattami , Haresh S. Patel , J.R. Rathod , Keyur S. Hingarajiya
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.665.202
关键词:
摘要: Physical vapour technique (PVT) is a versatile method to grow IIVI semiconductors. In present investigations, CdS crystals have been grown by this using dual zone micro processor controlled horizontal furnace. in case characterized EDAX for stoichiometric conformation. The roughness of surface has studied detail optical microscopy, SEM and AFM. topography study as carried out understand the growth mechanism which was necessary its application electronic devices.
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