Growth and characterization of CdS and doped CdS single crystals

摘要: Abstract CdS and phosphorus, silicon selenium doped have been grown by physical vapour technique. The quartz ampoule used for the growth is designed according to Schieber's (Technology of crystal growth, ULCA, Extension course Engineering, 1974, p. 881) conditions. temperature 915°C with undercooling 25°C. For better transport starting material prepared as needle-like polycrystalline under high gradient. crystals cm size are formed like boule. pattern different boule analysed taking AFM photograph observed in both polar directions. Hall mobility measured pure CdS. At room found be 335 (cm 2 /V s) dislocation density 5×10 6  cm −2 . From photocurrent spectra optical band gap CdS, CdS:P, CdS:Se, CdS:Si using Ex( A ) exciton peak.