The incidence of voids in vapour grown CdS crystals

摘要: Abstract An extensive programme of work to grow large single crystals CdS from the vapour phase has been in progress here for some time. Crystals are grown by sublimation sealed, evacuated silica capsules, and open-ended tubes an atmosphere argon. It become evident that sealed capsules contain a variable number voids, while virtually void-free. The voids up 100 μm length, hexagonal cross-section lie parallel c -axis. Observation their reveals form predominantly close those parts capsule where developed white deposit volatilised during fabrication oxy-gas flame. Examination EDAX SEM confirmed presence silicon which supports notion minute particles SiO 2 originate walls inhibit advance growing interface at localised spots. This conclusion is non-appearance when worked such way deposits avoided.