Interfacial Perpendicular Magnetic Anisotropy in Magnetic Tunnel Junctions Comprising CoFeB with FeNiSiB Layers
作者： Do Kyun Kim , Minhyeok Lee , Junghoon Joo , Young Keun Kim
DOI: 10.1007/S13391-019-00183-2
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摘要: Controlling ferromagnetic thickness (t) and properties such as saturation magnetization (Ms) effective magnetic anisotropy constant (Keff) has been regarded critical for the performance of tunnel junctions (MTJs) with interfacial perpendicular anisotropy. Here, we report effects hybridizing a CoFeB layer FeNiSiB part free structure. We deposited thin film stacks by magnetron sputtering on Si wafers thermal oxides carried out post-deposition heat treatment at 300 °C 1 h in vacuum under field. found that Ms Keff could be tuned adding amorphous FeNiSiB. While values were modified, tunneling magnetoresistance (TMR) ratios MTJs maintained, even though was decreased half. Moreover, an asymmetric bias voltage dependence TMR suppressed FeNiSiB/CoFeB hybrid layers due to improvements interface quality between CoFeB/MgO interfaces.
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