Chapter 3 – SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS

摘要: This chapter discusses surface and interfacial recombination in semiconductors. If a semiconductor has defects such as vacancies, it creates dangling bonds. These vacancies have energies the bandgap of semiconductor. Foreign impurity atoms also midgap energies. trap states participate nonradiative with electrons holes. The recombinations detrimental effects on both performance shelf life device. Fermi level pinning because states, provides theoretical basis for interface There are tremendous opportunities now to understand electronic structure surfaces by advanced laser techniques. Surface is very significant technology. Surface-passivation methods useful controlling level. Future technologies should make possible achieve extremely pure that necessary ultralarge-scale integration (ULSI)