作者: Kento Hirohata , Yasutaka Nishi , Naoki Tsukamoto , Nobuto Oka , Yasushi Sato
DOI: 10.1016/J.TSF.2009.09.177
关键词:
摘要: Al-doped ZnO (AZO) films were deposited on fused silica glass substrates unheated or heated at 200° C by reactive dc sputtering using a Zn–Al alloy target with mid-frequency pulsing (50kHz) and the plasma control unit with a feedback system of the optical emission intensity of the atomic O* line at 777nm to control oxygen gas flow. The stable and reproducible depositions were successfully carried out in the transition region. The deposition rates attained in this study were about 10–20 times higher than the one by …