Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments
作者： Armin Richter , Jan Benick , Achim Kimmerle , Martin Hermle , Stefan W. Glunz
DOI: 10.1063/1.4903988
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摘要: Thin layers of Al2O3 are well known for the excellent passivation p-type c-Si surfaces including highly doped p+ emitters, due to a high density fixed negative charges. Recent results indicate that can also provide good certain phosphorus-diffused n+ surfaces. In this work, we studied recombination at passivated theoretically with device simulations and experimentally deposited atomic layer deposition. The simulation there is surface doping concentration, where maximal depletion or weak inversion charge carriers c-Si/Al2O3 interface. This pronounced maximum was observed either single stacks capped by SiNx, when activated low temperature anneal (425 °C). contrast, Al2O3/SiNx short high-temperature firing process (800 °C) significant lower re...
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