Reactions of Thin Metal Films with Si or SiO2 Substrates

摘要: The changes in vacuum-evaporated films of Ti, V and Mb on Si SiO2 substrates after thermal anneals are investigated by backscattering x-ray spectrometry. Backscattering analysis provides the relative atomic composition as a function depth with high sensitivity. Glancing angle spectrometry detects chemical specificity. Combined, two methods create specific picture transformations induced treatment. Generally reaction pure substrate produces Si-rich silicide, metal-rich silicide form an intermediate layer largely free oxygen. oxygen originally bound to is transferred remaining metal layer. Residual “in film oxides influence formation.