Ion Beam Irradiation of Metal Films on SiO 2
作者： G. J. Clark , J. E. E. Baglin , F. M. d'Heurle , C. W. White , G. Farlow
DOI: 10.1557/PROC-27-55
关键词:
摘要: Ion beam irradiation of metal film/SiO2 interfaces causes reactions when the metals are those chemically capable reducing SiO2. These result in formation rich silicides region interface and an increase adhesion film to substrate. For other nonreactive ion lateral transport atoms resulting island structure. The results obtained by compared with previous studies high temperature thermal processing films on
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sci-hub.se 参考文章(9)
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