Mechanism of adhesion improvement in ion-beam mixed Cu/SiO2
作者： KH Chae , HG Jang , IS Choi , SM Jung , KS Kim
DOI: 10.1007/BF00445989
关键词:
摘要: A thin copper layer (35 nm) deposited on SiO2 has been subjected to ion-beam mixing with 80 keV Ar+ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated using Rutherford backscattering spectroscopy, grazing-angle X-ray diffraction, photo-electron spectroscopy scratch testing. The adhesion the film was improved by a factor three dose 1.5 × 1016 cm−2 while high-temperature enhanced five. Ballistic plays role in improvement for room-temperature ion mixing, creation Cu2O phase induced contributes enhancement high temperature.
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