作者: Dong-Hau Kuo , Jen-Pin Hsu
DOI: 10.1016/J.JCRYSGRO.2013.03.013
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摘要: Abstract Dense Cu 2 ZnSnSe 4 (CZTSe) thin films with large grains of 1–6 μm were prepared by sputtering a metallic Cu–Zn–Sn target followed selenization process at 600 °C. Selenization the aid (SnSe +Se) and CuSe was explained, which involved nucleation growth stages. The design modified Cu(In,Ga)Se barrier layer prevented high-temperature reactions between Mo electrode as-deposited film led to pore-free interface. Using our simple approach, passivated formed in an absorption layer, is important for fabricating CZTSe solar cells.