Study of polycrystalline bulk CuIn1–xGaxTe2
作者： O. Aissaoui , S. Mehdaoui , L. Bechiri , M. Benabdeslem , N. Benslim
DOI: 10.1016/J.JLUMIN.2010.09.028
关键词:
摘要: Abstract Polycrystalline CuIn1−xGaxTe2 bulk films were synthesized by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te a vacuum sealed quartz ampoule. The phase structure composition of the analysed X-ray diffraction energy-dispersive analysis, respectively. samples, p-type conductivity, are found to be near-stoichiometric, polycrystalline, with tetragonal chalcopyrite structure, predominantly oriented along direction perpendicular (1 1 2) plane. Photoluminescence spectra recorded at 7 K 700 mW characterize defects structural quality. main peak as function has been studied.
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