Method of fabricating a laser diode that includes thermally cleaning a deposition reactor using a gas mixture of arsine and hydrogen
作者： Yong-jo Park , Ki-Sung Kim
DOI:
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摘要: Provided is a method of fabricating laser diode including lower Al-containing semiconductor material layer, active and an upper layer. The includes thermally cleaning the inside deposition reactor in which substrate on layer stacked loaded. During thermal process, treated at predetermined temperature atmosphere gas mixture AsH 3 H 2 that injected into reactor.
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