Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys

作者: Andrew G. Norman , Jerry M. Olson

DOI:

关键词:

摘要: Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one the may comprise providing a growth surface in reaction chamber introducing first mixture precursor materials into to form buffer layer (12) thereon. A second be provided an active region (14) on (12), wherein nanostructure is embedded matrix (16) (14). Additional steps are also disclosed preparing product various applications.

参考文章(18)
J. F. Geisz, H. R. Moutinho, A. G. Norman, J. M. Olson, M. M. Al-Jassim, S. M. Vernon, A. Mason, Phase Separation and Facet Formation during the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy Microscopy of Semiconducting Materials XI, Oxford (GB), 03/22/1999--03/25/1999; Other Information: Supercedes report DE00012158; PBD: 13 Sep 1999. ,(1999)
Jerry R. Meyer, Filbert J. Bartoli, Craig A. Hoffman, Method of forming an interband lateral resonant tunneling transistor ,(1996)
Stephen Mcconnell Gates, James Richard Heath, Method to form a polycrystalline film on a substrate ,(1994)
Pierre M Petroff, Mohan Krishnamurthy, Devin Leonard, Quantum dot fabrication process using strained epitaxial growth ,(1994)
Kevin J. Malloy, Andreas Stintz, Luke F. Lester, Timothy C. Newell, Petros N. Varangis, Hua Li, Quantum dash devices ,(2001)
Harry R. Clark, Brian S. Ahern, Method for producing semiconductor particles ,(1996)
John Michael Keen, Leigh-Trevor Canham, Weng Yee Leong, Method of making silicon quantum wires ,(1990)